of capacitors - placing component in container, evacuating

After evacuation of the chamber a gas sample is extracted and fed to a for testing SF6 tightness of capacitors. Enables ivity of 1 in 10

STAGE, SUBSTRATE PROCESSING APPARATUS, PLASMA PROCESSING

201127-manufacture, and hence the semiconductor device which is an exhausting pump for evacuation, via(fluorine)-, e.g., CF4-, NF3- and SF6

Method for depositing a solder material on a substrate

at one point of the rim to allow degassing or evacuation of the cavity.A CF4-plasma (alternatively for instance a SF6 plasma) is given to

Method for surface treatment of silicon based substrate

Process room 2 in vacuum chamber 1 is connected to vacuum evacuation/open (SF6), or another mixed gas including fluorine based gas, hydrogen, and

Fine pattern forming method

2007820-In addition, as the halogen-containing gas, at least one of HBr, SF6, () valve 26 arranged between the chamber 22 and the evacuation a

NOAA/CMDL Atmospheric CO2 Records

These flasks were filled by the evacuation method described below. In 1983, and SF6 by gas chromatography to be made on each sample during one

MANUFACTURE OF SEMICONDUCTOR DEVICE

Next, SiCl4 gas and SF6 gas are introduced into the etching chamber, for example at a flow rate ratio of 1:4 the speed of evacuation of the

Method for manufacturing a semiconductor device having

An evacuation system 25 such as a cryopump is connected to the vacuum The etch-back is performed by flowing the etching gas, for example, SF6

SYSTEM FOR PROCESSES INCLUDING FLUORINATION

a first evacuation line in communication with the first conduit; a first benign fluoride gases, for example, CF4 and SF6, may be used to